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This quickly prevents cathode injection and forces the overall anode current to be converted into a gate current (usually within lμs), thus transforming the GTO into a
contactless base region PNP transistor, eliminating the cathode emitter contraction effect. As a result, its maximum turn-off current is much higher than the rated current
of conventional Gtos. Because IGCT is turned off at gain close to 1, the protective absorption circuit can be omitted. The so-called“GTO” state can be avoided because
the anode current is turned off in transistor mode in an open base state. The turn-off process allows a higher anode voltage rise rate, and the turn-off action is very
reliable. Therefore, IGCT combines the low-pass voltage drop and high blocking voltage of the thyristor with the stable turn-off characteristics of the transistor. It is an
ideal high power semiconductor switching device. Because the gate drive circuit must quickly transfer all positive current during the shutdown process.
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